发明授权
- 专利标题： Photoresist materials and photolithography process
- 专利标题（中）： 光刻胶材料和光刻工艺
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申请号： US11462413申请日： 2006-08-04
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公开(公告)号： US07972761B2公开(公告)日： 2011-07-05
- 发明人: Hsien-Cheng Wang , Chin-Hsiang Lin , H. J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
- 申请人： Hsien-Cheng Wang , Chin-Hsiang Lin , H. J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/30
摘要：
A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
公开/授权文献
- US20080030692A1 NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESS 公开/授权日：2008-02-07
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