发明授权
- 专利标题: Dual-gate, sonos, non-volatile memory cells and arrays thereof
- 专利标题(中): 双栅极,超声波,非易失性存储单元及其阵列
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申请号: US11352788申请日: 2006-02-13
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公开(公告)号: US07973366B2公开(公告)日: 2011-07-05
- 发明人: Chia-Hua Ho , Hang-Ting Lue , Yen-Hao Shih , Erh-Kun Lai , Kuang-Yeu Hsieh
- 申请人: Chia-Hua Ho , Hang-Ting Lue , Yen-Hao Shih , Erh-Kun Lai , Kuang-Yeu Hsieh
- 申请人地址: TW Hsinchu
- 专利权人: Macronix International Co., Ltd.
- 当前专利权人: Macronix International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
Memory cells which include a semiconductor substrate having a source region and a drain region separated by a channel region; a charge-trapping structure disposed above the channel region of the semiconductor substrate; a first gate disposed above the charge-trapping structure and proximate to the source region; and a second gate disposed above the charge-trapping structure and proximate to the drain region; where the first gate and the second gate are separated by a first nanospace are provided, along with arrays including a plurality of such cells, methods of manufacturing such cells and methods of operating such cells.