发明授权
- 专利标题: High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices
- 专利标题(中): 用于光电子器件阻挡膜沉积和/或封装的高通量过程和系统
-
申请号: US12122326申请日: 2008-05-16
-
公开(公告)号: US07976908B2公开(公告)日: 2011-07-12
- 发明人: Ahmet Gun Erlat , Anil Raj Duggal , Min Yan
- 申请人: Ahmet Gun Erlat , Anil Raj Duggal , Min Yan
- 申请人地址: US NY Niskayuna
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: US NY Niskayuna
- 代理商 Mary Louise Gioeni
- 主分类号: C23C16/513
- IPC分类号: C23C16/513 ; B05D5/12
摘要:
Processes for simultaneously encapsulating multiple optoelectronic devices and/or depositing a barrier film onto multiple substrates suitable for fabrication of optoelectronic devices thereon include the use of a plasma deposition apparatus having multiple pairs of opposing electrodes for deposition of reactants onto the substrate that is used to form the device or the complete device itself. The processes significantly reduce tact time relative to one at a time batch processing that is currently used for manufacturing optoelectronic devices.
公开/授权文献
信息查询
IPC分类: