发明授权
- 专利标题: Semiconductor memory device having a liquid-repellent layer
- 专利标题(中): 具有防液层的半导体存储器件
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申请号: US11884016申请日: 2006-02-07
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公开(公告)号: US07977669B2公开(公告)日: 2011-07-12
- 发明人: Mikio Yukawa , Gen Fujii , Hironobu Shoji
- 申请人: Mikio Yukawa , Gen Fujii , Hironobu Shoji
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2005-035266 20050210
- 国际申请: PCT/JP2006/302417 WO 20060207
- 国际公布: WO2006/085634 WO 20060817
- 主分类号: H01L35/24
- IPC分类号: H01L35/24 ; H01L51/00 ; H01L47/00
摘要:
It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.
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