发明授权
US07978510B2 Stochastic synapse memory element with spike-timing dependent plasticity (STDP) 有权
随机突触记忆元件具有尖峰时序依赖性可塑性(STDP)

Stochastic synapse memory element with spike-timing dependent plasticity (STDP)
摘要:
An active memory element is provided. A bipolar memory two-terminal element includes polarity-dependent switching. A probability of switching of the bi-polar memory element between a first state and a second state decays exponentially based on time delay and a difference between received signals at the two terminals and a switching threshold magnitude.
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