发明授权
US07978526B2 Low noise sense amplifier array and method for nonvolatile memory
有权
低噪声感知放大器阵列和非易失性存储器的方法
- 专利标题: Low noise sense amplifier array and method for nonvolatile memory
- 专利标题(中): 低噪声感知放大器阵列和非易失性存储器的方法
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申请号: US12563918申请日: 2009-09-21
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公开(公告)号: US07978526B2公开(公告)日: 2011-07-12
- 发明人: Hao Thai Nguyen , Man Lung Mui , Seungpil Lee
- 申请人: Hao Thai Nguyen , Man Lung Mui , Seungpil Lee
- 申请人地址: US CA Milpitas
- 专利权人: Sandisk Corporation
- 当前专利权人: Sandisk Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G11C16/26
- IPC分类号: G11C16/26
摘要:
In sensing a page of nonvolatile memory cells with a corresponding group of sense modules in parallel, as each high current cell is identified, it is locked out from further sensing while others in the page continued to be sensed. The sense module involved in the locked out is then in a lockout mode and becomes inactive. A noise source from the sense module becomes significant when in the lockout mode. The noise is liable to interfere with the sensing of neighboring cells by coupling through its bit line to neighboring ones. The noise can also couple through the common source line of the page to affect the accuracy of ongoing sensing of the cells in the page. Improved sense modules and method isolate the noise from the lockout sense module from affecting the other sense modules still active in sensing memory cell in the page.
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