发明授权
US07978744B2 Nitride based semiconductor laser device with oxynitride protective films on facets
有权
氮化物基半导体激光器件，面上有氮氧化物保护膜
- 专利标题： Nitride based semiconductor laser device with oxynitride protective films on facets
- 专利标题（中）： 氮化物基半导体激光器件，面上有氮氧化物保护膜
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申请号： US12236616申请日： 2008-09-24
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公开(公告)号： US07978744B2公开(公告)日： 2011-07-12
- 发明人: Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
- 申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
- 申请人地址： JP Moriguchi-shi
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Moriguchi-shi
- 代理机构： Mots Law, PLLC
- 代理商 Marvin A. Motsenbocker
- 优先权： JP2007-253414 20070928; JP2008-240080 20080918
- 主分类号： H01S5/028
- IPC分类号： H01S5/028
摘要：
One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
公开/授权文献
- US20090086783A1 NITRIDE BASED SEMICONDUCTOR LASER DEVICE 公开/授权日：2009-04-02
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