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    Nitride based semiconductor laser device with oxynitride protective films on facets
    2.
    发明授权
    Nitride based semiconductor laser device with oxynitride protective films on facets 有权
    氮化物基半导体激光器件，面上有氮氧化物保护膜

    公开(公告)号：US07978744B2

    公开(公告)日：2011-07-12

    申请号：US12236616

    申请日：2008-09-24

    申请人： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

    发明人： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

    IPC分类号： H01S5/028

    CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/0282

    摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

    摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，另一个面由（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氮作为构成元素的第一保护膜。 在另一方面形成包括氧作为构成元素的第二保护膜。

    Nitride based semiconductor laser device with oxynitride protective coatings on facets
    3.
    发明授权
    Nitride based semiconductor laser device with oxynitride protective coatings on facets 失效
    基于氮化物的半导体激光器件，具有氧氮化物保护涂层

    公开(公告)号：US07924898B2

    公开(公告)日：2011-04-12

    申请号：US12236627

    申请日：2008-09-24

    申请人： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

    发明人： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

    IPC分类号： H01S5/028

    CPC分类号： H01S5/32341 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1082 ,  H01S5/227 ,  H01S5/3202 ,  H01S2301/176

    摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

    摘要翻译： 氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氧作为构成元素的第一保护膜。 在另一方面形成包括氮作为构成元素的第二保护膜。

    NITRIDE BASED SEMICONDUCTOR LASER DEVICE
    4.
    发明申请
    NITRIDE BASED SEMICONDUCTOR LASER DEVICE 有权
    基于氮化物的半导体激光器件

    公开(公告)号：US20090086783A1

    公开(公告)日：2009-04-02

    申请号：US12236616

    申请日：2008-09-24

    申请人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

    发明人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

    IPC分类号： H01S5/026

    CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/0282

    摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

    摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，其另一个面由（000

    SEMICONDUCTOR LASER DEVICE
    5.
    发明申请
    SEMICONDUCTOR LASER DEVICE 审中-公开
    半导体激光器件

    公开(公告)号：US20090028204A1

    公开(公告)日：2009-01-29

    申请号：US12179254

    申请日：2008-07-24

    申请人： Ryoji Hiroyama ,  Yasuhiko Nomura ,  Masayuki Hata ,  Yasuto Miyake

    发明人： Ryoji Hiroyama ,  Yasuhiko Nomura ,  Masayuki Hata ,  Yasuto Miyake

    IPC分类号： H01S5/026

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0206 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2301/173

    摘要： A semiconductor laser device includes a substrate made of a nitride-based semiconductor and a waveguide formed on a principal surface of the substrate, wherein the substrate includes a dislocation concentrated region arranged so as to obliquely extend with respect to the principal surface of the substrate, and the waveguide is so formed as to be located above the dislocation concentrated region and also located on a region except a portion where the dislocation concentrated region is present in the principal surface of the substrate.

    摘要翻译： 半导体激光器件包括由氮化物基半导体制成的衬底和形成在衬底的主表面上的波导，其中衬底包括布置成相对于衬底的主表面倾斜延伸的位错集中区域， 并且波导被形成为位于位错集中区域之上并且还位于除了位错集中区域存在于基板的主表面中的部分之外的区域上。

    Semiconductor laser device
    6.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US06768755B2

    公开(公告)日：2004-07-27

    申请号：US09746065

    申请日：2000-12-26

    申请人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

    发明人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

    IPC分类号： H01S500

    CPC分类号： H01S5/2231 ,  H01S5/06226 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227

    摘要： A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

    摘要翻译： 在具有脊部的p型包覆层上依次形成具有在脊部上表面上的条纹开口的耗尽增强层，低载流子浓度层和n型电流阻挡层。 低载流子浓度层的载流子浓度比n型电流阻挡层低。 耗尽增强层的带隙被设定为p型覆层和低载流子浓度层的带隙之间的中间电平。 或者，在n型耗尽增强层上形成具有低载流子浓度的第一电流阻挡层和相反导电型的第二电流阻挡层，并且在第二电流阻挡层上形成p型接触层 相反的导电类型和另一个p型接触层。

    AlGaInP-based high-output red semiconductor laser device
    9.
    发明授权
    AlGaInP-based high-output red semiconductor laser device 有权
    基于AlGaInP的高输出红色半导体激光器件

    公开(公告)号：US06778575B2

    公开(公告)日：2004-08-17

    申请号：US10100920

    申请日：2002-03-20

    申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

    发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

    IPC分类号： G01R2302

    CPC分类号： B82Y20/00 ,  H01S5/0218 ,  H01S5/162 ,  H01S5/34326 ,  H01S2301/18

    摘要： A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°.

    摘要翻译： 提供具有实际折射率引导结构的半导体激光器件，当垂直光束发散角处于至少12.5°且不大于20.0°的较小水平时，也可以获得高扭结光输出和高最大光输出 。 该半导体激光器件包括在n型GaAs衬底上形成的AlGaInP的n型包覆层，在n型覆层上形成有AlGaInP层的有源层，形成在活性层上的AlGaInP的p型包覆层 层和形成为部分地覆盖p型包层的光限制层，垂直光束发散角为至少12.5°且不大于20.0°。 因此，与具有超过20.0°的垂直光束发散角的常规半导体激光器件相比，可以获得更高的扭结光输出和更高的最大光输出。