Invention Grant
US07981714B2 Nitride based semiconductor device using nanorods and process for preparing the same
有权
使用纳米棒的基于氮化物的半导体器件及其制备方法
- Patent Title: Nitride based semiconductor device using nanorods and process for preparing the same
- Patent Title (中): 使用纳米棒的基于氮化物的半导体器件及其制备方法
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Application No.: US12497060Application Date: 2009-07-02
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Publication No.: US07981714B2Publication Date: 2011-07-19
- Inventor: Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Seong Suk Lee , Sung Hwan Jang
- Applicant: Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Seong Suk Lee , Sung Hwan Jang
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LP
- Priority: KR10-2004-0087202 20041029
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
Public/Granted literature
- US20090269909A1 NITRIDE BASED SEMICONDUCTOR DEVICE USING NANORODS AND PROCESS FOR PREPARING THE SAME Public/Granted day:2009-10-29
Information query
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