发明授权
- 专利标题： Using unstable nitrides to form semiconductor structures
- 专利标题（中）： 使用不稳定的氮化物形成半导体结构
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申请号： US12788603申请日： 2010-05-27
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公开(公告)号： US07982204B2公开(公告)日： 2011-07-19
- 发明人: Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
- 申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
公开/授权文献
- US20100230817A1 Using Unstable Nitrides to Form Semiconductor Structures 公开/授权日：2010-09-16
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