发明授权
US07985649B1 Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
有权
制造半导体结构的方法，其用于制造分离栅极非易失性存储单元
- 专利标题： Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
- 专利标题（中）： 制造半导体结构的方法，其用于制造分离栅极非易失性存储单元
-
申请号： US12683972申请日： 2010-01-07
-
公开(公告)号： US07985649B1公开(公告)日： 2011-07-26
- 发明人: Brian A. Winstead , Cheong M. Hong , Sung-Taeg Kang , Konstantin V. Loiko , Spencer E. Williams
- 申请人： Brian A. Winstead , Cheong M. Hong , Sung-Taeg Kang , Konstantin V. Loiko , Spencer E. Williams
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 James L. Clingan, Jr.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of making a semiconductor device on a semiconductor layer is provided. The method includes: forming a select gate dielectric layer over the semiconductor layer; forming a select gate layer over the select gate dielectric layer; and forming a sidewall of the select gate layer by removing at least a portion of the select gate layer. The method further includes growing a sacrificial layer on at least a portion of the sidewall of the select gate layer and under at least a portion of the select gate layer and removing the sacrificial layer to expose a surface of the at least portion of the sidewall of the select gate layer and a surface of the semiconductor layer under the select gate layer. The method further includes forming a control gate dielectric layer, a charge storage layer, and a control gate layer.