发明授权
US07986545B2 Non-volatile memory device and method of operating the same 有权
非易失性存储器件及其操作方法

Non-volatile memory device and method of operating the same
摘要:
A non-volatile memory device having a stack structure, and a method of operating the non-volatile memory device In which the non-volatile memory device includes a plurality of variable resistors arranged in at least one layer. At least one layer selection bit line and a plurality of bit lines coupled to the plurality of the variable resistors are provided. A plurality of selection transistors coupled between the plurality of the bit lines and the plurality of the variable resistors are provided.
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