发明授权
- 专利标题: Non-volatile memory device and method of operating the same
- 专利标题(中): 非易失性存储器件及其操作方法
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申请号: US12465125申请日: 2009-05-13
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公开(公告)号: US07986545B2公开(公告)日: 2011-07-26
- 发明人: Tae-eung Yoon , Won-joo Kim , June-mo Koo , Suk-pil Kim , Tae-hee Lee
- 申请人: Tae-eung Yoon , Won-joo Kim , June-mo Koo , Suk-pil Kim , Tae-hee Lee
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2008-0075619 20080801
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A non-volatile memory device having a stack structure, and a method of operating the non-volatile memory device In which the non-volatile memory device includes a plurality of variable resistors arranged in at least one layer. At least one layer selection bit line and a plurality of bit lines coupled to the plurality of the variable resistors are provided. A plurality of selection transistors coupled between the plurality of the bit lines and the plurality of the variable resistors are provided.
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