Dynamic control of process chemistry for improved within-substrate process uniformity

Invention Grant

US07988813B2 Dynamic control of process chemistry for improved within-substrate process uniformity 有权

Title translation: 动态控制工艺化学，改善衬底内工艺的均匀性

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Patent Title: Dynamic control of process chemistry for improved within-substrate process uniformity
Patent Title (中): 动态控制工艺化学，改善衬底内工艺的均匀性
Application No.: US11684853

Application Date: 2007-03-12
Publication No.: US07988813B2

Publication Date: 2011-08-02
Inventor: Lee Chen , Radha Sundararajan , Merritt Funk
Applicant: Lee Chen , Radha Sundararajan , Merritt Funk
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Agency: Wood, Herron & Evans, LLP
Main IPC: H01L21/306
IPC: H01L21/306

Dynamic control of process chemistry for improved within-substrate process uniformity

Abstract:

A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.

Abstract(Chinese):

描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

Public/Granted literature

US20080223873A1 DYNAMIC CONTROL OF PROCESS CHEMISTRY FOR IMPROVED WITHIN-SUBSTRATE PROCESS UNIFORMITY Public/Granted day:2008-09-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）