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188 条记录 (耗时 0.035 秒)

    Adaptive recipe selector
    2.
    发明授权
    Adaptive recipe selector 有权
    自适应配方选择器

    公开(公告)号：US08501499B2

    公开(公告)日：2013-08-06

    申请号：US13073237

    申请日：2011-03-28

    申请人： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

    发明人： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

    IPC分类号： H01L21/00 ,  H01L21/461 ,  H01L21/302

    CPC分类号： H01L22/20 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/6708 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.

    摘要翻译： 本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个 更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。 多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

    Dynamic temperature backside gas control for improved within-substrate process uniformity
    3.
    发明授权
    Dynamic temperature backside gas control for improved within-substrate process uniformity 有权
    动态温度背面气体控制，可提高基板内工艺的均匀性

    公开(公告)号：US07674636B2

    公开(公告)日：2010-03-09

    申请号：US11684818

    申请日：2007-03-12

    申请人： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

    发明人： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

    IPC分类号： H01L21/66

    CPC分类号： H01L22/20

    摘要： A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.

    摘要翻译： 提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。 优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。 例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。 支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性 。

    DYNAMIC CONTROL OF PROCESS CHEMISTRY FOR IMPROVED WITHIN-SUBSTRATE PROCESS UNIFORMITY
    4.
    发明申请
    DYNAMIC CONTROL OF PROCESS CHEMISTRY FOR IMPROVED WITHIN-SUBSTRATE PROCESS UNIFORMITY 有权
    改进基板工艺均匀性的工艺化学动态控制

    公开(公告)号：US20080223873A1

    公开(公告)日：2008-09-18

    申请号：US11684853

    申请日：2007-03-12

    申请人： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

    发明人： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

    IPC分类号： C23F1/02

    CPC分类号： H01J37/32642 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/0324 ,  Y10T428/215

    摘要： A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.

    摘要翻译： 描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。 用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。 所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与 一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

    Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus
    5.
    发明授权
    Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus 有权
    低电子温度微波表面波等离子体（SWP）处理方法及装置

    公开(公告)号：US08968588B2

    公开(公告)日：2015-03-03

    申请号：US13436458

    申请日：2012-03-30

    申请人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

    发明人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

    IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

    摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

    摘要翻译： 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

    LOW ELECTRON TEMPERATURE MICROWAVE SURFACE-WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS
    6.
    发明申请
    LOW ELECTRON TEMPERATURE MICROWAVE SURFACE-WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS 有权
    低电子温度微波表面波等离子体（SWP）处理方法和装置

    公开(公告)号：US20130256272A1

    公开(公告)日：2013-10-03

    申请号：US13436458

    申请日：2012-03-30

    申请人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

    发明人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

    IPC分类号： H05H1/24 ,  B44C1/22 ,  C23C16/511 ,  C23C16/52

    CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

    摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

    摘要翻译： 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

    Adaptive Recipe Selector
    9.
    发明申请
    Adaptive Recipe Selector 有权
    自适应配方选择器

    公开(公告)号：US20120252141A1

    公开(公告)日：2012-10-04

    申请号：US13073237

    申请日：2011-03-28

    申请人： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

    发明人： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

    IPC分类号： H01L21/66

    CPC分类号： H01L22/20 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/6708 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.

    摘要翻译： 本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个 更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。 多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。