Dielectric interface for group III-V semiconductor device

Invention Grant

US07989280B2 Dielectric interface for group III-V semiconductor device 有权

Title translation: III-V族半导体器件的介质界面

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Patent Title: Dielectric interface for group III-V semiconductor device
Patent Title (中): III-V族半导体器件的介质界面
Application No.: US12338839

Application Date: 2008-12-18
Publication No.: US07989280B2

Publication Date: 2011-08-02
Inventor: Justin K. Brask , Suman Datta , Mark L. Doczy , James M. Blackwell , Matthew V. Metz , Jack T. Kavalieros , Robert S. Chau
Applicant: Justin K. Brask , Suman Datta , Mark L. Doczy , James M. Blackwell , Matthew V. Metz , Jack T. Kavalieros , Robert S. Chau
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Blakely, Sokoloff, Taylor & Zafman LLP
Main IPC: H01L21/336
IPC: H01L21/336

Dielectric interface for group III-V semiconductor device

Abstract:

A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.

Abstract(Chinese):

描述了III-V族半导体器件及其制造方法。高k电介质通过硫族化物区域连接到约束区域。

Public/Granted literature

US20090095984A1 DIELECTRIC INTERFACE FOR GROUP III-V SEMICONDUCTOR DEVICE Public/Granted day:2009-04-16

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的