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US07989302B2 Methods of forming a hyper-abrupt P-N junction and design structures for an integrated circuit 有权
形成超突变P-N结的方法和集成电路的设计结构

Methods of forming a hyper-abrupt P-N junction and design structures for an integrated circuit
摘要:
Methods of forming hyper-abrupt p-n junctions and design structures for an integrated circuit containing devices structures with hyper-abrupt p-n junctions. The hyper-abrupt p-n junction is defined in a SOI substrate by implanting a portion of a device layer to have one conductivity type and then implanting a portion of this doped region to have an opposite conductivity type. The counterdoping defines the hyper-abrupt p-n junction. A gate structure carried on a top surface of the device layer operates as a hard mask during the ion implantations to assist in defining a lateral boundary for the hyper-abrupt p-n junction.
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