发明授权
- 专利标题: Methods of forming a hyper-abrupt P-N junction and design structures for an integrated circuit
- 专利标题(中): 形成超突变P-N结的方法和集成电路的设计结构
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申请号: US12795108申请日: 2010-06-07
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公开(公告)号: US07989302B2公开(公告)日: 2011-08-02
- 发明人: Jeffrey B. Johnson , Alvin J. Joseph , Robert M. Rassel , Yun Shi
- 申请人: Jeffrey B. Johnson , Alvin J. Joseph , Robert M. Rassel , Yun Shi
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Wood, Herron & Evans LLP
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
Methods of forming hyper-abrupt p-n junctions and design structures for an integrated circuit containing devices structures with hyper-abrupt p-n junctions. The hyper-abrupt p-n junction is defined in a SOI substrate by implanting a portion of a device layer to have one conductivity type and then implanting a portion of this doped region to have an opposite conductivity type. The counterdoping defines the hyper-abrupt p-n junction. A gate structure carried on a top surface of the device layer operates as a hard mask during the ion implantations to assist in defining a lateral boundary for the hyper-abrupt p-n junction.
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