Invention Grant
US07989792B2 Abrupt metal-insulator transition device with parallel MIT material layers
有权
具有并联MIT材料层的突发金属 - 绝缘体转换装置
- Patent Title: Abrupt metal-insulator transition device with parallel MIT material layers
- Patent Title (中): 具有并联MIT材料层的突发金属 - 绝缘体转换装置
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Application No.: US12162964Application Date: 2007-01-31
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Publication No.: US07989792B2Publication Date: 2011-08-02
- Inventor: Hyun-Tak Kim , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun
- Applicant: Hyun-Tak Kim , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2006-0009827 20060201; KR10-2006-0057086 20060623
- International Application: PCT/KR2007/000526 WO 20070131
- International Announcement: WO2007/089097 WO 20070809
- Main IPC: H01L49/00
- IPC: H01L49/00

Abstract:
An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.
Public/Granted literature
- US20090057820A1 ABRUPT METAL-INSULATOR TRANSITION DEVICE WITH PARALLEL CONDUCTING LAYERS Public/Granted day:2009-03-05
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