Invention Grant
- Patent Title: Test pattern structure
- Patent Title (中): 测试模式结构
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Application No.: US12397662Application Date: 2009-03-04
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Publication No.: US07989804B2Publication Date: 2011-08-02
- Inventor: Da-Jiang Yang , Chih-Ping Lee , Rui-Huang Cheng , Xing-Hua Zhang , Xu Ma , Xiao-Fei Han , Hong Ma , Hong Liao , Yuan-Li Ding
- Applicant: Da-Jiang Yang , Chih-Ping Lee , Rui-Huang Cheng , Xing-Hua Zhang , Xu Ma , Xiao-Fei Han , Hong Ma , Hong Liao , Yuan-Li Ding
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A test pattern structure including a first conductive layer and a second conductive layer is provided. The second conductive layer is directly disposed on the first conductive layer and connected to the first conductive layer through a plurality of connection interfaces. The test pattern structure of the present invention can detect the interconnection failure quickly and correctly without SEM identification.
Public/Granted literature
- US20100227131A1 TEST PATTERN STRUCTURE Public/Granted day:2010-09-09
Information query
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