发明授权
- 专利标题： Semiconductor device and fabrication thereof
- 专利标题（中）： 半导体器件及其制造
-
申请号： US11785023申请日： 2007-04-13
-
公开(公告)号： US07994040B2公开(公告)日： 2011-08-09
- 发明人: Min-Hwa Chi , Wen-Chuan Chiang , Mu-Chi Chiang , Chang-Ku Chen
- 申请人： Min-Hwa Chi , Wen-Chuan Chiang , Mu-Chi Chiang , Chang-Ku Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for forming a semiconductor device is disclosed. A substrate including a gate dielectric layer and a gate electrode layer sequentially formed thereon is provided. An offset spacer is formed on sidewalls of the gate dielectric layer and the gate electrode layer. A carbon spacer is formed on a sidewall of the offset spacer, and the carbon spacer is then removed. The substrate is implanted to form a lightly doped region using the gate electrode layer and the offset spacer as a mask. The method may also include providing a substrate having a gate dielectric layer and a gate electrode layer sequentially formed thereon. A liner layer is formed on sidewalls of the gate electrode layer and on the substrate. A carbon spacer is formed on a portion of the liner layer adjacent the sidewall of the gate electrode layer. A main spacer is formed on a sidewall of the carbon spacer. The carbon spacer is removed to form an opening between the liner layer and the main spacer. The opening is sealed by a sealing layer to form an air gap.
公开/授权文献
- US20080254579A1 Semiconductor device and fabrication thereof 公开/授权日：2008-10-16
信息查询
IPC分类:
