发明授权
- 专利标题： Low-temperature dielectric film formation by chemical vapor deposition
- 专利标题（中）： 通过化学气相沉积形成低温电介质膜
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申请号： US12894513申请日： 2010-09-30
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公开(公告)号： US07994070B1公开(公告)日： 2011-08-09
- 发明人: Anthony Dip , Kimberly G Reid
- 申请人： Anthony Dip , Kimberly G Reid
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400° C. and less than 650° C., flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.