公开(公告)号：US07994070B1

公开(公告)日：2011-08-09

申请号：US12894513

申请日：2010-09-30

申请人： Anthony Dip ,  Kimberly G Reid

发明人： Anthony Dip ,  Kimberly G Reid

IPC分类号： H01L21/31

CPC分类号： H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28273 ,  H01L21/3105

摘要： A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400° C. and less than 650° C., flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.

摘要翻译： 用于在基板上沉积电介质膜的方法包括将多个基板定位在处理室中，将处理室加热到400℃至小于650℃的沉积温度，使包含水蒸气的第一工艺气体 进入处理室，使包含二氯硅烷（DCS）的第二工艺气体流入处理室，建立小于2Torr的气体压力，并使第一和第二工艺气体反应以在多个衬底上热沉积氧化硅膜 。 一个实施例还包括在流过第一处理气体和第二处理气体的同时使包含一氧化氮（NO）气体的第三处理气体流入处理室; 并使氧化膜与第三工艺气体反应，以在衬底上形成氮氧化硅膜。