Invention Grant
US07994560B2 Integrated circuit comprising a transistor and a capacitor, and fabrication method
有权
包括晶体管和电容器的集成电路及其制造方法
- Patent Title: Integrated circuit comprising a transistor and a capacitor, and fabrication method
- Patent Title (中): 包括晶体管和电容器的集成电路及其制造方法
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Application No.: US12173702Application Date: 2008-07-15
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Publication No.: US07994560B2Publication Date: 2011-08-09
- Inventor: Christian Caillat , Richard Ferrant
- Applicant: Christian Caillat , Richard Ferrant
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Gardere Wynne Sewell LLP
- Priority: FR0756524 20070716
- Main IPC: H01L29/94
- IPC: H01L29/94

Abstract:
An integrated circuit includes a substrate and at least one active region. A transistor produced in the active region separated from the substrate. This transistor includes a source or drain first region and a drain or source second region which are connected by a channel. A gate structure is position on top of said channel and operates to control the channel. The gate structure is formed in a trench whose sidewalls have a shape which converges (narrows) in the width dimension towards the substrate. A capacitor is also formed having a first electrode, a second electrode and a dielectric layer between the electrodes. This capacitor is also formed in a trench. An electrode line is connected to the first electrode of the capacitor. The second electrode of the capacitor is formed in a layer shared in common with at least part of the drain or source second region of the transistor. A bit line is located beneath the gate structure. The integrated circuit may, for example, be a DRAM memory cell.
Public/Granted literature
- US20090121269A1 INTEGRATED CIRCUIT COMPRISING A TRANSISTOR AND A CAPACITOR, AND FABRICATION METHOD Public/Granted day:2009-05-14
Information query
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