发明授权
- 专利标题： Method of forming a light emitting device with a nanocrystalline silicon embedded insulator film
- 专利标题（中）： 用纳米晶硅嵌入绝缘膜形成发光器件的方法
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申请号： US12126430申请日： 2008-05-23
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公开(公告)号： US07998884B2公开(公告)日： 2011-08-16
- 发明人: Jiandong Huang , Pooran Chandra Joshi , Apostolos T. Voutsas , Hao Zhang
- 申请人： Jiandong Huang , Pooran Chandra Joshi , Apostolos T. Voutsas , Hao Zhang
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理机构： Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.