发明授权
- 专利标题： Embedded memory cell and method of manufacturing same
- 专利标题（中）： 嵌入式存储单元及其制造方法
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申请号： US12319101申请日： 2008-12-30
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公开(公告)号： US07999298B2公开(公告)日： 2011-08-16
- 发明人: Jack T. Kavalieros , Niloy Mukherjee , Gilbert Dewey , Dinesh Somasekhar , Brian S. Doyle
- 申请人： Jack T. Kavalieros , Niloy Mukherjee , Gilbert Dewey , Dinesh Somasekhar , Brian S. Doyle
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Kenneth A. Nelson
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
An embedded memory cell includes a semiconducting substrate (110), a transistor (120) having a source/drain region (121) at least partially embedded in the semiconducting substrate, and a capacitor (130) at least partially embedded in the semiconducting substrate. The capacitor includes a first electrode (131) and a second electrode (132) that are electrically isolated from each other by a first electrically insulating material (133). The first electrode is electrically connected to the semiconducting substrate and the second electrode is electrically connected to the source/drain region of the transistor.
公开/授权文献
- US20100163945A1 Embedded memory cell and method of manufacturing same 公开/授权日：2010-07-01