发明授权
- 专利标题： Method for producing a bonded wafer
- 专利标题（中）： 接合晶片的制造方法
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申请号： US12676874申请日： 2008-08-06
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公开(公告)号： US08003494B2公开(公告)日： 2011-08-23
- 发明人: Hideki Nishihata , Nobuyuki Morimoto , Tatsumi Kusaba , Akihiko Endo
- 申请人： Hideki Nishihata , Nobuyuki Morimoto , Tatsumi Kusaba , Akihiko Endo
- 申请人地址： JP Minato-ku
- 专利权人： SUMCO Corporation
- 当前专利权人： SUMCO Corporation
- 当前专利权人地址： JP Minato-ku
- 代理机构： Christensen O'Connor Johnson Kindness PLLC
- 优先权： JP2007-232818 20070907
- 国际申请： PCT/JP2008/064505 WO 20080806
- 国际公布： WO2009/031392 WO 20090312
- 主分类号： H01L21/46
- IPC分类号： H01L21/46
摘要：
In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.
公开/授权文献
- US20100248447A1 METHOD FOR PRODUCING A BONDED WAFER 公开/授权日：2010-09-30
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