公开(公告)号：US20090233420A1

公开(公告)日：2009-09-17

申请号：US12427442

申请日：2009-04-21

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L21/322

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对p型硅晶片进行热处理，其电阻率为10Ω·cm以上，BMD密度为5×10 7个/ cm 3以上，n型杂质浓度为1×10 14原子/ cm 3以下 距离晶片表面5微米以内的深度。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US20060234461A1

公开(公告)日：2006-10-19

申请号：US11403410

申请日：2006-04-12

申请人： Hideki Nishihata ,  Tatsumi Kusaba ,  Nobuyuki Morimoto

发明人： Hideki Nishihata ,  Tatsumi Kusaba ,  Nobuyuki Morimoto

IPC分类号： H01L21/331

CPC分类号： H01L21/0206 ,  H01L21/76254

摘要： In the production process of an SOI substrate using a hydrogen ion implantation method, a process is provided for cleaning the substrate which can prevent formation of voids when bonding substrates and formation of blistering after exfoliation. In the process for cleaning, cleaning of the substrate is performed before performing hydrogen ion implantation. As the cleaning method, one or more of a combination selected from the group consisting of SC-1 cleaning, SC-1 cleaning+SC-2 cleaning, HF/O3 cleaning, and HF cleaning+O3 cleaning, can be used.

摘要翻译： 在使用氢离子注入法的SOI衬底的制造方法中，提供了清洗衬底的过程，其可以防止在接合衬底时形成空隙并且在剥离之后形成起泡。 在清洗过程中，在进行氢离子注入之前进行基板的清洗。 作为清洗方法，选自SC-1清洗，SC-1清洗+ SC-2清洗，HF / O 3清洗和HF清洗+ O的组合中的一种或多种 可以使用 _{3 清洁。}

公开(公告)号：US07939441B2

公开(公告)日：2011-05-10

申请号：US12427442

申请日：2009-04-21

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L21/425

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对该p型硅晶片进行热处理，电阻率为10Ω·cm·cm以上，BMD密度为5×10 7缺陷/ cm 3以上，n型杂质浓度为1×10 14原子/ 在距离晶片表面5μm以下的深度处。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US07927972B2

公开(公告)日：2011-04-19

申请号：US12384819

申请日：2009-04-09

申请人： Akihiko Endo ,  Tatsumi Kusaba

发明人： Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76243 ,  H01L21/30625 ,  H01L21/31111

摘要： Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO2 layer but a layer mixed partially with Si or SiOx, it is removed by here is provided a method for producing a bonded wafer in which it is possible to remove an oxygen ion implanted layer effectively as it is by repetitive treatment with an oxidizing solution and HF solution at a step of removing the oxygen ion implanted layer in a bonded wafer.

摘要翻译： 即使在活性层用晶片中的氧离子注入层不是完全连续的SiO 2层，而是与Si或SiO x部分混合的层，所以通过这样除去，提供了一种制造接合晶片的方法，其中可以 通过在去除接合晶片上的氧离子注入层的步骤中用氧化溶液和HF溶液重复处理，有效地除去氧离子注入层。

公开(公告)号：US07767549B2

公开(公告)日：2010-08-03

申请号：US11957674

申请日：2007-12-17

申请人： Hidehiko Okuda ,  Tatsumi Kusaba ,  Akihiko Endo

发明人： Hidehiko Okuda ,  Tatsumi Kusaba ,  Akihiko Endo

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76251 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding step in which the base wafer on which the oxide film has been formed is bonded to a top wafer to form a bonded wafer, and a thinning step in which the top wafer included in the bonded wafer is thinned. The oxidation step comprises heating the base wafer to a heating temperature ranging from 800 to 1300° C. at a rate of temperature increase ranging from 1 to 300° C./second in an oxidizing atmosphere, and the bonding step is carried out so as to position the oxide film formed in the oxidation step at an interface of the top wafer and the base wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括在基底晶片的至少一个表面上形成氧化膜的氧化步骤，其上形成有氧化膜的基底晶片结合到顶部晶片以形成接合晶片的接合步骤 以及其中包含在接合晶片中的顶部晶片变薄的变薄步骤。 氧化步骤包括在氧化气氛中以1〜300℃/秒的升温速度将基底晶片加热至800〜1300℃的加热温度，并进行接合工序，使 将在氧化步骤中形成的氧化膜定位在顶部晶片和基底晶片的界面处。

公开(公告)号：US20100184270A1

公开(公告)日：2010-07-22

申请号：US12749453

申请日：2010-03-29

申请人： Akihiko Endo ,  Tatsumi Kusaba

发明人： Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76256

摘要： A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substrate directly or through an insulating film; a step of subjecting the resulting bonded wafer to a heat treatment for increasing a bonding strength; a step of removing a portion of the wafer for active layer in the bonded wafer to a given position not exposing the oxygen ion implanted layer by a given method; a step of exposing the entire surface of the oxygen ion implanted layer; and a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of exposing the entire surface of the oxygen ion implanted layer is carried out by a dry etching under given conditions.

摘要翻译： 通过包括从用于活性层的晶片的表面注入氧离子以在用于活性层的晶片内的给定位置处形成氧离子注入层的步骤来生产键合晶片; 将活性层的晶片直接或通过绝缘膜将支撑基板的晶片接合到支撑基板的晶片的步骤; 对所得到的接合晶片进行热处理以提高接合强度的步骤; 将接合晶片中的有源层的晶片的一部分去除到通过给定方法不暴露氧离子注入层的给定位置的步骤; 暴露氧离子注入层的整个表面的步骤; 以及去除曝光的氧离子注入层以获得给定厚度的有源层的步骤，其中通过在给定条件下的干蚀刻来进行暴露氧离子注入层的整个表面的步骤。

公开(公告)号：US07745306B2

公开(公告)日：2010-06-29

申请号：US11880144

申请日：2007-07-20

申请人： Hidehiko Okuda ,  Tatsumi Kusaba

发明人： Hidehiko Okuda ,  Tatsumi Kusaba

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded wafer is produced by a method comprising a step of implanting ions of a light element such as hydrogen, helium or the like into a wafer for active layer at a predetermined depth position to form an ion implanted layer, a step of bonding the wafer for active layer to a wafer for support substrate through an insulating film, a step of exfoliating the wafer at the ion implanted layer, a first heat treatment step of conducting a sacrificial oxidation for reducing damage on a surface of an active layer exposed through the exfoliation and a second heat treatment step of raising a bonding strength, in which the second heat treatment step is continuously conducted after the first heat treatment step without removing an oxide film formed on the surface of the active layer.

摘要翻译： 通过包括将诸如氢，氦等的光元件的离子注入预定深度位置的有源层的晶片以形成离子注入层的步骤，制造粘合晶片，将晶片接合的步骤 通过绝缘膜将活性层提供到用于支撑衬底的晶片，在离子注入层剥离晶片的步骤，进行牺牲氧化以减少通过剥离暴露的活性层的表面上的损伤的第一热处理步骤 以及提高接合强度的第二热处理步骤，其中在第一热处理步骤之后连续进行第二热处理步骤而不去除形成在有源层表面上的氧化膜。

公开(公告)号：US20090298261A1

公开(公告)日：2009-12-03

申请号：US12473122

申请日：2009-05-27

申请人： Akihiko Endo ,  Tatsumi Kusaba

发明人： Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76256

摘要： A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substrate directly or through an insulating film; a step of subjecting the resulting bonded wafer to a heat treatment for increasing a bonding strength; a step of removing a portion of the wafer for active layer in the bonded wafer to a given position not exposing the oxygen ion implanted layer by a given method; a step of exposing the entire surface of the oxygen ion implanted layer; and a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of exposing the entire surface of the oxygen ion implanted layer is carried out by a dry etching under given conditions.

摘要翻译： 通过包括从用于活性层的晶片的表面注入氧离子以在用于活性层的晶片内的给定位置处形成氧离子注入层的步骤来生产键合晶片; 将活性层的晶片直接或通过绝缘膜将支撑基板的晶片接合到支撑基板的晶片的步骤; 对所得到的接合晶片进行热处理以提高接合强度的步骤; 将接合晶片中的有源层的晶片的一部分去除到通过给定方法不暴露氧离子注入层的给定位置的步骤; 暴露氧离子注入层的整个表面的步骤; 以及去除曝光的氧离子注入层以获得给定厚度的有源层的步骤，其中通过在给定条件下的干蚀刻来进行暴露氧离子注入层的整个表面的步骤。

公开(公告)号：US07442623B2

公开(公告)日：2008-10-28

申请号：US11562162

申请日：2006-11-21

申请人： Akihiko Endo ,  Tatsumi Kusaba

发明人： Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/44

CPC分类号： H01L21/76254 ,  B08B3/08 ,  B08B7/0035 ,  H01L21/02052 ,  H01L21/3065 ,  H01L21/76256

摘要： A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlapping a first semiconductor substrate serving as an active layer onto a second semiconductor substrate serving as a support substrate via an oxide film or without an oxide film; the active layer is formed by forming a thin film from the first semiconductor substrate; and the surface of the active layer is flattened by vapor-phase etching. After forming a thin film from the first semiconductor substrate and before flattening the surface of the active layer by the vapor-phase etching, an organic substance adhering to the surface of the active layer is removed and a native oxide film generated on the surface of the active layer is removed after removing the organic substance.

摘要翻译： 获得了在键合衬底的有源层的表面上限制微突起和裂纹粒子的产生并且活性层的表面变平的高质量的键合衬底。 通过氧化膜或不含氧化膜将作为有源层的第一半导体衬底与用作支撑衬底的第二半导体衬底重叠形成层叠体; 有源层通过从第一半导体衬底形成薄膜而形成; 并且通过气相蚀刻使有源层的表面变平。 在从第一半导体衬底形成薄膜之后，并且通过气相蚀刻在活性层的表面平坦化之前，去除附着在有源层的表面上的有机物质，并且在表面上产生自然氧化膜 去除有机物后去除活性层。

公开(公告)号：US20080014716A1

公开(公告)日：2008-01-17

申请号：US11855736

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

摘要翻译： 本发明的目的是提供一种制造SOI层的方法，该方法没有损坏，厚度变化减小，厚度均匀。 通过提供一种用于制造SOI衬底的方法来满足目的，包括以下步骤：在第一硅衬底的至少一个表面上形成氧化物膜，从第一硅衬底的表面注入氢离子，从而形成离子注入区 在第一硅衬底的内部，将第一硅衬底与第二硅衬底接合，其中介于氧化膜之间，从而形成层叠组件，对层压组件进行第一加热处理，该加热处理由在特定温度下加热， 第一硅衬底在离子注入区分裂，从而制造键合衬底，通过对键合衬底进行湿蚀刻，使SOI层的暴露表面平坦化，对接合衬底进行第二次加热处理，该加热处理由750-900℃ 在氧化气氛中，从而降低对SOI层的损害，并使其受到影响 所得到的键合衬底进行第三加热处理，其由900至1200℃的加热组成，从而提高键合衬底的结合强度。