- 专利标题： Light emitting device having light extraction structure and method for manufacturing the same
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申请号： US12637653申请日： 2009-12-14
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公开(公告)号： US08008103B2公开(公告)日： 2011-08-30
- 发明人: Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
- 申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
- 申请人地址： KR Seoul KR Seoul
- 专利权人： LG Innotek Co., Ltd.,LG Electronics Inc.
- 当前专利权人： LG Innotek Co., Ltd.,LG Electronics Inc.
- 当前专利权人地址： KR Seoul KR Seoul
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： KR10-2006-0041006 20060508; KR10-2007-0037414 20070417; KR10-2007-0037415 20070417; KR10-2007-0037416 20070417
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/18
摘要：
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
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