发明授权
- 专利标题： CMOS device with raised source and drain regions
- 专利标题（中）： CMOS器件具有升高的源极和漏极区域
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申请号： US11588920申请日： 2006-10-27
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公开(公告)号： US08008157B2公开(公告)日： 2011-08-30
- 发明人: Chun-Sheng Liang , Hung-Ming Chen , Chien-Chao Huang , Fu-Liang Yang
- 申请人： Chun-Sheng Liang , Hung-Ming Chen , Chien-Chao Huang , Fu-Liang Yang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method of forming a semiconductor structure includes forming a PMOS device and an NMOS device. The step of forming the PMOS device includes forming a first gate stack on a semiconductor substrate; forming a first offset spacer on a sidewall of the first gate stack; forming a stressor in the semiconductor substrate using the first offset spacer as a mask; and epitaxially growing a first raised source/drain extension (LDD) region on the stressor. The step of forming the NMOS device includes forming a second gate stack on the semiconductor substrate; forming a second offset spacer on a sidewall of the second gate stack; epitaxially growing a second raised LDD region on the semiconductor substrate using the second offset spacer as a mask; and forming a deep source/drain region adjoining the second raised LDD region.
公开/授权文献
- US20080102573A1 CMOS device with raised source and drain regions 公开/授权日：2008-05-01
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