发明授权
US08008205B2 Methods for producing a semiconductor device having planarization films
有权
具有平坦化膜的半导体器件的制造方法
- 专利标题： Methods for producing a semiconductor device having planarization films
- 专利标题（中）： 具有平坦化膜的半导体器件的制造方法
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申请号： US12159582申请日： 2006-10-13
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公开(公告)号： US08008205B2公开(公告)日： 2011-08-30
- 发明人: Yasumori Fukushima , Yutaka Takafuji , Michiko Takei , Kazuhide Tomiyasu
- 申请人： Yasumori Fukushima , Yutaka Takafuji , Michiko Takei , Kazuhide Tomiyasu
- 申请人地址： JP Osaka-Shi Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka-Shi Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 国际申请： PCT/JP2006/320492 WO 20061013
- 国际公布： WO2007/102248 WO 20070913
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer.
公开/授权文献
- US20100148261A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 公开/授权日：2010-06-17
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