Invention Grant
US08013441B2 Power semiconductor device in lead frame employing connecting element with conductive film
有权
引线框中的功率半导体器件采用带导电膜的连接元件
- Patent Title: Power semiconductor device in lead frame employing connecting element with conductive film
- Patent Title (中): 引线框中的功率半导体器件采用带导电膜的连接元件
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Application No.: US11581678Application Date: 2006-10-16
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Publication No.: US08013441B2Publication Date: 2011-09-06
- Inventor: Michael Bauer , Alfred Haimerl , Angela Kessler , Joachim Mahler , Wolfgang Schober
- Applicant: Michael Bauer , Alfred Haimerl , Angela Kessler , Joachim Mahler , Wolfgang Schober
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102005049687 20051014
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/58 ; H01L23/62 ; H01L23/495 ; H01L23/52 ; H01L29/40
Abstract:
One aspect of the invention relates to a power semiconductor device in lead frame technology and a method for producing the same. The power semiconductor device has a vertical current path through a power semiconductor chip. The power semiconductor chip has at least one large-area electrode on its top side and a large-area electrode on its rear side. The rear side electrode is surface-mounted on a lead frame chip island of a lead frame and the top side electrode is electrically connected to an internal lead of the lead frame via a connecting element. The connecting element has an electrically conductive film on a surface facing the top side electrode, the electrically conductive film extending from the top side electrode to the internal lead.
Public/Granted literature
- US20070085201A1 Power semiconductor device in lead frame technology with a vertical current path Public/Granted day:2007-04-19
Information query
IPC分类:
