Invention Grant
- Patent Title: Phase change material layers and phase change memory devices including the same
- Patent Title (中): 相变材料层和包括其的相变存储器件
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Application No.: US12285449Application Date: 2008-10-06
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Publication No.: US08017929B2Publication Date: 2011-09-13
- Inventor: Youn-seon Kang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Yoon-ho Khang , Cheol-kyu Kim , Dong-seok Suh , Tae-yon Lee
- Applicant: Youn-seon Kang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Yoon-ho Khang , Cheol-kyu Kim , Dong-seok Suh , Tae-yon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2008-0003524 20080111
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.
Public/Granted literature
- US20090179185A1 Phase change material layers and phase change memory devices including the same Public/Granted day:2009-07-16
Information query
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