发明授权
- 专利标题： Integrated circuit including structures arranged at different densities and method of forming the same
- 专利标题（中）： 集成电路包括以不同密度排列的结构及其形成方法
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申请号： US11847095申请日： 2007-08-29
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公开(公告)号： US08021933B2公开(公告)日： 2011-09-20
- 发明人: Dominik Olligs , Joachim Deppe , David Pritchard , Christoph Kleint
- 申请人： Dominik Olligs , Joachim Deppe , David Pritchard , Christoph Kleint
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 代理机构： Edell, Shapiro & Finnan, LLC
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
A method of forming an integrated circuit includes forming first structures in a first portion of the integrated circuit and forming second structures, which are arranged more densely than the first structures, in a second portion. The first and second structures are defined by lithography processes using photomasks. At least one of the photomasks includes both openings in a first region for supporting the definition of the first structures and openings in a second region for supporting the definition of the second structures.
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