发明授权
- 专利标题: Methods for fabricating PMOS metal gate structures
- 专利标题(中): 制造PMOS金属栅极结构的方法
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申请号: US11968099申请日: 2007-12-31
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公开(公告)号: US08021940B2公开(公告)日: 2011-09-20
- 发明人: Matthew V. Metz , Mark L. Doczy , Gilbert Dewey , Jack Kavalieros
- 申请人: Matthew V. Metz , Mark L. Doczy , Gilbert Dewey , Jack Kavalieros
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理商 Kathy J. Ortiz
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
Methods of forming a microelectronic structure are described. Those methods may include forming a gate dielectric layer on a substrate, forming a metal gate layer on the gate dielectric layer, and then forming a polysilicon layer on the metal gate layer in situ, wherein the metal gate layer is not exposed to air.
公开/授权文献
- US20090166769A1 METHODS FOR FABRICATING PMOS METAL GATE STRUCTURES 公开/授权日:2009-07-02