发明授权
US08022505B2 Semiconductor device structure and integrated circuit therefor 有权
半导体器件结构及其集成电路

Semiconductor device structure and integrated circuit therefor
摘要:
A semiconductor device structure comprises a plurality of vertical layers and a plurality of conductive elements wherein the vertical layers and plurality of conductive elements co-operate to function as at least two active devices in parallel. The semiconductor device structure may also comprise a plurality of horizontal conductive elements wherein the structure is arranged to support at least two concurrent current flows, such that a first current flow is across the plurality of vertical conductive elements and a second current flow is across the plurality of horizontal conductive elements.
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