发明授权
- 专利标题: Semiconductor device structure and integrated circuit therefor
- 专利标题(中): 半导体器件结构及其集成电路
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申请号: US12282486申请日: 2006-03-13
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公开(公告)号: US08022505B2公开(公告)日: 2011-09-20
- 发明人: Philippe Renaud , Patrice Besse , Amaury Gendron
- 申请人: Philippe Renaud , Patrice Besse , Amaury Gendron
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 国际申请: PCT/EP2006/004032 WO 20060313
- 国际公布: WO2007/104342 WO 20070920
- 主分类号: H01L27/082
- IPC分类号: H01L27/082 ; H01L23/62 ; H01L29/76 ; H01L31/062 ; H01L29/94
摘要:
A semiconductor device structure comprises a plurality of vertical layers and a plurality of conductive elements wherein the vertical layers and plurality of conductive elements co-operate to function as at least two active devices in parallel. The semiconductor device structure may also comprise a plurality of horizontal conductive elements wherein the structure is arranged to support at least two concurrent current flows, such that a first current flow is across the plurality of vertical conductive elements and a second current flow is across the plurality of horizontal conductive elements.
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