发明授权
- 专利标题： Method for manufacturing single crystal of nitride
- 专利标题（中）： 氮化物单晶制造方法
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申请号： US12284470申请日： 2008-09-22
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公开(公告)号： US08025728B2公开(公告)日： 2011-09-27
- 发明人: Mikiya Ichimura , Katsuhiro Imai , Chikashi Ihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
- 申请人： Mikiya Ichimura , Katsuhiro Imai , Chikashi Ihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
- 申请人地址： JP Nagoya JP Suita
- 专利权人： NGK Insulators, Ltd.,Osaka University
- 当前专利权人： NGK Insulators, Ltd.,Osaka University
- 当前专利权人地址： JP Nagoya JP Suita
- 代理机构： Burr & Brown
- 优先权： JP2006-084250 20060324
- 主分类号： C30B29/38
- IPC分类号： C30B29/38
摘要：
A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.
公开/授权文献
- US20090095212A1 Method for manufacturing single crystal of nitride 公开/授权日：2009-04-16