公开(公告)号：US08415690B2

公开(公告)日：2013-04-09

申请号：US13457931

申请日：2012-04-27

申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L21/02381 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.

摘要翻译： 提供了使用硅衬底作为基底的外延衬底。 一种外延衬底，其中在（111）单晶Si衬底上形成一组III族氮化物层，使得III族氮化物层组的（0001）晶面基本上平行于 所述基板包括：由AlN制成的第一III族氮化物层，其具有由柱状或粒状晶体或畴中至少一种构成的许多缺陷; 与第一III族氮化物层的界面成形为三维凹凸面的第二III族氮化物层; 以及外延形成在第二III族氮化物层上的第三III族氮化物层，作为梯度组成层，其中Al的存在比例在更接近第四族III族氮化物的部分中较小。

公开(公告)号：US20120126293A1

公开(公告)日：2012-05-24

申请号：US13353759

申请日：2012-01-19

申请人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

发明人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0

摘要翻译： 在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层 基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

公开(公告)号：US08025728B2

公开(公告)日：2011-09-27

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B29/38

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 在生长容器中将晶种浸入含有助熔剂和单晶材料的熔体中，以在籽晶上产生氮化物单晶。 在熔体（TS）和熔体（TB）的最下部分的气 - 液界面处的温度差（TS-TB）设定为1℃或更大和8℃或更低。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US20120161152A1

公开(公告)日：2012-06-28

申请号：US13414104

申请日：2012-03-07

申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Sota Maehara ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Sota Maehara ,  Mitsuhiro Tanaka

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L29/2003 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/205 ,  H01L29/7787

摘要： Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.

摘要翻译： 提供了具有少量翘曲的无裂纹外延基板，其中使用硅基板作为基底。 外延衬底包括（111）单晶Si衬底，缓冲层和晶体层。 缓冲层由第一层叠单元和第二层压单元交替层叠形成。 第一层压单元包括组成调制层和第一中间层。 组成调制层由具有不同组成的第一单位层和第二单位层形成，以便在其中存在压缩应变。 第一中间层增强了存在于组成调制层中的压缩应变。 第二层压单元是基本上无应变的第二中间层。

公开(公告)号：US20110049570A1

公开(公告)日：2011-03-03

申请号：US12853716

申请日：2010-08-10

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/772 ,  H01L29/201 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分大于除了近表面部分之外的部分的In组成比。

公开(公告)号：US07670430B2

公开(公告)日：2010-03-02

申请号：US12221642

申请日：2008-08-05

申请人： Mikiya Ichimura ,  Katsuhiro Imai

发明人： Mikiya Ichimura ,  Katsuhiro Imai

IPC分类号： C30B9/00 ,  C30B17/00

CPC分类号： C30B9/10 ,  C22B3/22 ,  C22B7/003 ,  C22B7/004 ,  C22B26/10 ,  C30B29/403 ,  C30B29/406 ,  Y02P10/234

摘要： It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux 23 is heated in a medium 19 unreactive with sodium metal 22 at a temperature equal to or higher than the melting point of sodium metal to separate and recover the sodium metal 22 from the flux 23. The medium is a hydrocarbon, for example.

摘要翻译： 提供了一种在短时间内和以可重复使用的形式从含金属钠的助熔剂中轻轻且安全地回收钠金属的方法。 助熔剂23在介质19中以等于或高于金属钠熔点的温度与金属钠22反应而加热，以分离​​和回收来自助熔剂23的金属钠。介质是例如烃。

公开(公告)号：US09382641B2

公开(公告)日：2016-07-05

申请号：US12767041

申请日：2010-04-26

申请人： Mikiya Ichimura ,  Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Mikiya Ichimura ,  Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： H01L29/20 ,  C30B25/02 ,  C30B19/00 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02 ,  H01L29/778

CPC分类号： C30B25/02 ,  C30B19/00 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786

摘要： An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with AlN. A barrier layer is formed on the spacer layer with group III nitride having a composition of InXAlyGazN (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, AlN, and GaN as vertexes.

摘要翻译： 在本发明中提供了具有优选的二维电子气特性和接触特性的外延基板。 在GaN衬底上形成沟道层。 在AlN的沟道层上形成间隔层。 在间隔层上形成阻挡层，其中III族氮化物具有InXAlyGazN（其中x + y + z = 1）的组成，并且至少包括In，Al和Ga，使得阻挡层的组成在 用根据三元相图上的组成定义的四条线以InN，AlN和GaN为顶点包围。

公开(公告)号：US09090993B2

公开(公告)日：2015-07-28

申请号：US13570665

申请日：2012-08-09

申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L21/02 ,  C30B29/40 ,  C30B25/18 ,  H01L29/15 ,  C30B29/68 ,  H01L33/00 ,  H01L33/04 ,  H01L33/12 ,  H01L29/778 ,  H01L29/872

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B25/183 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/7786 ,  H01L29/872 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.

摘要翻译： 提供了一种具有减小翘曲的无裂纹外延衬底，其中硅衬底用作基底衬底。 外延衬底包括（111）单晶Si衬底，层叠有多个超晶格层的超晶格层组和晶体层。 超晶格层由第一单位层和由具有不同组成的III-III族氮化物制成的第二单元层交替地和重复地层叠形成。 晶体层由III族氮化物制成，并且形成在基底基板上方，以便相对于基底衬底位于超晶格层组的上侧。 超晶格层组中含有压应变。 在超晶格层组中，超晶格层离基底越远，压应变越大。

公开(公告)号：US08853828B2

公开(公告)日：2014-10-07

申请号：US13353759

申请日：2012-01-19

申请人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

发明人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

IPC分类号： H01L29/20 ,  H01L21/02 ,  C30B29/40 ,  C30B25/18 ,  H01L29/872 ,  H01L29/778

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0

摘要翻译： 在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层 基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

公开(公告)号：US08598626B2

公开(公告)日：2013-12-03

申请号：US12853685

申请日：2010-08-10

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462

摘要： Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter α satisfying a range where 0≦α≦1.

摘要翻译： 本发明提供一种能够实现肖特基结的反向特性的高可靠性的半导体装置的半导体装置用外延基板。 一种用于半导体器件的外延衬底，其通过在基底衬底上通过层叠形成III族氮化物层，使得每个层的（0001）晶面大致平行于衬底表面而形成，其包括：沟道层，其由 具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1，z1> 0）的组成的第一III族氮化物; 和由具有Inx2Aly2N（x2 + y2 = 1，x2> 0，y2> 0）的组成的第二III族氮化物形成的阻挡层，其中第二III族氮化物是短距离有序混合晶体 满足0 @α@ 1范围的 - 序列参数α。