A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.