发明授权
- 专利标题: Method of fabricating semiconductor substrate and method of fabricating light emitting device
- 专利标题(中): 制造半导体衬底的方法和制造发光器件的方法
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申请号: US12805958申请日: 2010-08-26
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公开(公告)号: US08026119B2公开(公告)日: 2011-09-27
- 发明人: Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
- 申请人: Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
- 申请人地址: KR Ansan-si
- 专利权人: Seoul Opto Device Co., Ltd.
- 当前专利权人: Seoul Opto Device Co., Ltd.
- 当前专利权人地址: KR Ansan-si
- 代理机构: H.C. Park & Associates, PLC
- 优先权: KR10-2009-0079429 20090826; KR10-2009-0079431 20090826; KR10-2009-0079434 20090826; KR10-2009-0079436 20090826
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
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