公开(公告)号：US08680559B2

公开(公告)日：2014-03-25

申请号：US12941536

申请日：2010-11-08

申请人： Kyoung Wan Kim ,  Soo Young Moon ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Jeong Hee Yang ,  Won Cheol Seo

发明人： Kyoung Wan Kim ,  Soo Young Moon ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Jeong Hee Yang ,  Won Cheol Seo

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

摘要翻译： 本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘 在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

公开(公告)号：US20110053303A1

公开(公告)日：2011-03-03

申请号：US12805958

申请日：2010-08-26

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

公开(公告)号：US08329488B2

公开(公告)日：2012-12-11

申请号：US13506295

申请日：2012-04-10

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

公开(公告)号：US08183075B2

公开(公告)日：2012-05-22

申请号：US13137124

申请日：2011-07-21

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

摘要翻译： 本发明提供一种制造半导体衬底的方法和一种制造发光器件的方法。 该方法包括在基板上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，在第一半导体层的第一部分形成空隙 在第二半导体层形成期间在金属材料层下面的第一半导体层，以及通过使用化学溶液蚀刻第一半导体层的至少第二部分来将衬底与第二半导体层分离。

公开(公告)号：US08026119B2

公开(公告)日：2011-09-27

申请号：US12805958

申请日：2010-08-26

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

摘要翻译： 本发明提供一种制造半导体衬底的方法和一种制造发光器件的方法。 该方法包括在基板上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，在第一半导体层的第一部分形成空隙 在第二半导体层形成期间在金属材料层下面的第一半导体层，以及通过使用化学溶液蚀刻第一半导体层的至少第二部分来将衬底与第二半导体层分离。

公开(公告)号：US20110114990A1

公开(公告)日：2011-05-19

申请号：US12941536

申请日：2010-11-08

申请人： Kyoung Wan KIM ,  Soo Young MOON ,  Kyu Ho LEE ,  Yeo Jin YOON ,  Jeong Hee YANG ,  Won Cheol SEO

发明人： Kyoung Wan KIM ,  Soo Young MOON ,  Kyu Ho LEE ,  Yeo Jin YOON ,  Jeong Hee YANG ,  Won Cheol SEO

IPC分类号： H01L33/62

CPC分类号： H01L33/38 ,  H01L33/20

摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

摘要翻译： 本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘 在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

公开(公告)号：US06445125B1

公开(公告)日：2002-09-03

申请号：US09282353

申请日：1999-03-30

申请人： Yang-woon Na ,  Sung-ho Jo ,  Soo-young Moon

发明人： Yang-woon Na ,  Sung-ho Jo ,  Soo-young Moon

IPC分类号： H01J1304

CPC分类号： H01J31/127

摘要： Disclosed is a flat panel display and a method for manufacturing the same. The flat display has a first substrate and a second substrate sealed in a vacuum at a predetermined interval to form a cell gap and including a plurality of spacers interposed therebetween, the second substrate including a plurality of anode electrodes formed in a predetermined pattern on one side thereof and a phosphor layer formed on the pattern of the anode electrodes. The flat panel display further includes a plurality of cathode electrodes formed in a predetermined pattern on the first substrate; an insulating layer disposed on the cathode electrodes and having a plurality of apertures formed therein; a plurality of field emission cathodes provided in the apertures of the insulating layer contacting the cathode electrodes; a gate electrode pattern realized through a plurality of gate electrodes, the gate electrode pattern being disposed on the insulating layer and having formed openings corresponding, in size and location, to the apertures of the insulating layer; and a plurality of focusing electrodes provided between the gate electrode pattern and the cathode electrodes, and which control the flow of electrons emitted from the same.

摘要翻译： 公开了一种平板显示器及其制造方法。 平面显示器具有第一基板和第二基板，以预定间隔密封在真空中以形成单元间隙，并且包括多个间隔件，第二基板包括在一侧以预定图案形成的多个阳极电极 并且形成在阳极电极的图案上的荧光体层。 平板显示器还包括在第一基板上以预定图案形成的多个阴极电极; 绝缘层，设置在所述阴极电极上并且在其中形成有多个孔; 设置在所述绝缘层的与所述阴极电极接触的孔中的多个场致发射阴极; 通过多个栅电极实现的栅电极图案，所述栅电极图案设置在所述绝缘层上，并且具有与所述绝缘层的孔径相对应的尺寸和位置的形成的开口; 以及设置在栅电极图案和阴极电极之间并且控制从其发射的电子流的多个聚焦电极。

公开(公告)号：US20120202306A1

公开(公告)日：2012-08-09

申请号：US13506295

申请日：2012-04-10

申请人： Chang Youn KIM ,  Shiro SAKAI ,  Hwa Mok KIM ,  Joon Hee LEE ,  Soo Young MOON ,  Kyoung Wan KIM

发明人： Chang Youn KIM ,  Shiro SAKAI ,  Hwa Mok KIM ,  Joon Hee LEE ,  Soo Young MOON ,  Kyoung Wan KIM

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

公开(公告)号：US20120021546A1

公开(公告)日：2012-01-26

申请号：US13137124

申请日：2011-07-21

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.