发明授权
- 专利标题： Semiconductor element and manufacturing method thereof
- 专利标题（中）： 半导体元件及其制造方法
-
申请号： US11933935申请日： 2007-11-01
-
公开(公告)号： US08026143B2公开(公告)日： 2011-09-27
- 发明人: Naomu Kitano , Takashi Minami , Motomu Kosuda , Heiji Watanabe
- 申请人： Naomu Kitano , Takashi Minami , Motomu Kosuda , Heiji Watanabe
- 申请人地址： JP Kanagawa
- 专利权人： Canon Anelva Corporation
- 当前专利权人： Canon Anelva Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2007-178723 20070706
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film is formed by sputtering a Hf metal film on a SiO2 film (or a SiON film) on a Si wafer. A TiO2 film is formed by sputtering a Ti metal film on the HfSiO film and subjecting the Ti metal film to a thermal oxidation treatment. A TiN metal film is deposited on the TiO2 film. The series of treatments are performed continuously, without exposing the films and the wafer to atmospheric air. The resultant TiN/TiO2/HfSiO/SiO2/Si structure satisfies the conditions: EOT
公开/授权文献
- US20080305597A1 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF 公开/授权日：2008-12-11
信息查询
IPC分类:
