公开(公告)号：US08653533B2

公开(公告)日：2014-02-18

申请号：US13394549

申请日：2010-09-02

申请人： Shuhei Mitani ,  Yuki Nakano ,  Heiji Watanabe ,  Takayoshi Shimura ,  Takuji Hosoi ,  Takashi Kirino

发明人： Shuhei Mitani ,  Yuki Nakano ,  Heiji Watanabe ,  Takayoshi Shimura ,  Takuji Hosoi ,  Takashi Kirino

IPC分类号： H01L29/15

CPC分类号： H01L29/7827 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0223 ,  H01L21/02236 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/0445 ,  H01L21/049 ,  H01L21/8213 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/1087 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/45 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/7813

摘要： A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在碳化硅衬底上形成氧化硅膜，在含有氢气的气体中退火碳化硅衬底和氧化硅膜，并在氧化硅膜上形成氧氮化硅膜 碳化硅衬底和氧化硅膜的退火。

公开(公告)号：US08575677B2

公开(公告)日：2013-11-05

申请号：US13353089

申请日：2012-01-18

申请人： Heiji Watanabe ,  Kazuhiko Endo ,  Kenzo Manabe

发明人： Heiji Watanabe ,  Kazuhiko Endo ,  Kenzo Manabe

IPC分类号： H01L27/115 ,  H01L21/84

CPC分类号： H01L21/28202 ,  H01L21/28167 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A method of manufacturing a semiconductor device including introducing nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided.

摘要翻译： 一种在硅衬底上依次具有栅极绝缘膜和栅电极的半导体器件; 其中所述栅极绝缘膜包括含氮的高介电常数绝缘膜，其具有将氮引入金属氧化物或金属硅酸盐中的结构; 含氮高介电常数绝缘膜中的氮浓度在膜厚方向上具有分布; 在与硅衬底相距一定距离的区域存在氮含量高介电常数绝缘膜中的氮浓度在膜厚方向上达到最大的位置。 还提供一种制造半导体器件的方法，该半导体器件包括通过用含氮等离子体照射由金属氧化物或金属硅酸盐制成的高介电常数绝缘膜来引入氮。

公开(公告)号：US08125016B2

公开(公告)日：2012-02-28

申请号：US10519084

申请日：2003-06-19

申请人： Heiji Watanabe ,  Kazuhiko Endo ,  Kenzo Manabe

发明人： Heiji Watanabe ,  Kazuhiko Endo ,  Kenzo Manabe

IPC分类号： H01L27/115 ,  H01L21/84

CPC分类号： H01L21/28202 ,  H01L21/28167 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： There is provided a semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A manufacturing method of a semiconductor device comprising the step of making the introduction of nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided. This improves the thermal stability of the high-dielectric-constant insulating film, suppresses the dopant penetration and, in addition, prevents electric characteristics of the interface with the silicon substrate from deteriorating.

摘要翻译： 提供一种在硅衬底上依次具有栅极绝缘膜和栅电极的半导体器件; 其中所述栅极绝缘膜包括含氮的高介电常数绝缘膜，其具有将氮引入金属氧化物或金属硅酸盐中的结构; 含氮高介电常数绝缘膜中的氮浓度在膜厚方向上具有分布; 在与硅衬底相距一定距离的区域存在氮含量高介电常数绝缘膜中的氮浓度在膜厚方向上达到最大的位置。 还提供了一种半导体器件的制造方法，其包括通过用含氮等离子体照射由金属氧化物或金属硅酸盐制成的高介电常数绝缘膜来引入氮的步骤。 这提高了高介电常数绝缘膜的热稳定性，抑制了掺杂剂的渗透，另外防止与硅衬底的界面的电特性劣化。

公开(公告)号：US07164169B2

公开(公告)日：2007-01-16

申请号：US10477109

申请日：2002-08-22

申请人： Heiji Watanabe ,  Haruhiko Ono ,  Nobuyuki Ikarashi

发明人： Heiji Watanabe ,  Haruhiko Ono ,  Nobuyuki Ikarashi

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L35/26 ,  H01L29/40

CPC分类号： H01L21/02142 ,  H01L21/02271 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/517

摘要： A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is lower in a center portion in the film thickness direction than in an upper portion and in a lower portion.

摘要翻译： 半导体器件具有直接或间接地形成在衬底上的衬底和电介质膜。 电介质膜含有金属硅酸盐膜，并且在膜厚度方向上的中心部分，金属硅酸盐膜中的硅浓度比上部和下部低。

公开(公告)号：US20130285158A1

公开(公告)日：2013-10-31

申请号：US13558746

申请日：2012-07-26

申请人： Naomu Kitano ,  Takashi Minami ,  Nobuo Yamaguchi ,  Takuya Seino ,  Takashi Nakagawa ,  Heiji Watanabe ,  Takayoshi Shimura ,  Takuji Hosoi

发明人： Naomu Kitano ,  Takashi Minami ,  Nobuo Yamaguchi ,  Takuya Seino ,  Takashi Nakagawa ,  Heiji Watanabe ,  Takayoshi Shimura ,  Takuji Hosoi

IPC分类号： H01L29/49 ,  H01L21/285

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/51 ,  H01L29/78

摘要： Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer.

摘要翻译： 提供一种能够减少MIPS元件的制造工序中Si的扩散，抑制EOT的增加的半导体装置及其制造方法。 本发明的实施例是一种半导体器件，其包括具有设置在硅衬底上的栅极绝缘膜和设置在栅极绝缘膜上的栅电极的场效应晶体管。 栅电极是包括至少含有Ti，N和O（氧）的导电层和设置在导电层上的硅层的堆叠型电极，导电层中的氧浓度在 硅层。

公开(公告)号：US08026143B2

公开(公告)日：2011-09-27

申请号：US11933935

申请日：2007-11-01

申请人： Naomu Kitano ,  Takashi Minami ,  Motomu Kosuda ,  Heiji Watanabe

发明人： Naomu Kitano ,  Takashi Minami ,  Motomu Kosuda ,  Heiji Watanabe

IPC分类号： H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28229 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78

摘要： The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film is formed by sputtering a Hf metal film on a SiO2 film (or a SiON film) on a Si wafer. A TiO2 film is formed by sputtering a Ti metal film on the HfSiO film and subjecting the Ti metal film to a thermal oxidation treatment. A TiN metal film is deposited on the TiO2 film. The series of treatments are performed continuously, without exposing the films and the wafer to atmospheric air. The resultant TiN/TiO2/HfSiO/SiO2/Si structure satisfies the conditions: EOT

摘要翻译： 本发明的目的是提供一种用于诸如MOSFET的器件的高介电常数栅极电介质的方法。 通过在Si晶片上的SiO 2膜（或SiON膜）上溅射Hf金属膜来形成HfSiO膜。 通过在HfSiO膜上溅射Ti金属膜并对Ti金属膜进行热氧化处理来形成TiO 2膜。 在TiO 2膜上沉积TiN金属膜。 连续进行一系列处理，而不会将膜和晶片暴露在大气中。 所得TiN / TiO2 / HfSiO / SiO2 / Si结构满足条件：EOT <1.0nm，低漏电流和滞后<20mV。

公开(公告)号：US20100120238A1

公开(公告)日：2010-05-13

申请号：US12631286

申请日：2009-12-04

申请人： Naomu Kitano ,  Takashi Minami ,  Motomu Kosuda ,  Heiji Watanabe

发明人： Naomu Kitano ,  Takashi Minami ,  Motomu Kosuda ,  Heiji Watanabe

IPC分类号： H01L21/441 ,  C23C14/34 ,  C23C16/00

CPC分类号： H01L21/67207 ,  H01L21/28229 ,  H01L21/31683 ,  H01L29/513 ,  H01L29/517

摘要： A first aspect of the present invention provides a semiconductor manufacturing apparatus including: a load lock chamber; a transfer chamber; and a treatment chamber 1 and a treatment chamber 2 which carry out treatment using plasma, wherein, in the treatment chamber 2, an exhaust means is provided with a control means for making an oxygen partial pressure into 1*10−5 [Pa] or less. A second aspect of the present invention provides a method for forming a high dielectric constant film and a metal electrode successively, the method including the steps of: (1) depositing a metal film on a silicon oxide film or a silicon oxynitride film in the treatment chamber 1; (2) forming, in the treatment chamber 2, a high dielectric constant film by using the metal film formed in the treatment chamber 1; and (3) depositing, in the treatment chamber 1 or a treatment chamber 3 installed additionally, a metal electrode material on the high dielectric film formed in the treatment chamber 2, wherein the steps are carried out successively without being exposed to the atmosphere.

摘要翻译： 本发明的第一方面提供一种半导体制造装置，包括：负载锁定室; 传送室; 以及处理室1和处理室2，其使用等离子体进行处理，其中在处理室2中，排气装置设置有用于使氧分压为1×10 -5 [Pa]或 减。 本发明的第二方面提供了一种依次形成高介电常数膜和金属电极的方法，所述方法包括以下步骤：（1）在处理中在氧化硅膜或氧氮化硅膜上沉积金属膜 室1; （2）通过使用形成在处理室1中的金属膜在处理室2中形成高介电常数膜; （3）在处理室1或另外安装的处理室3内，在形成于处理室2中的高电介质膜上沉积金属电极材料，其中，这些步骤连续地进行而不暴露于大气中。

公开(公告)号：US20070090450A1

公开(公告)日：2007-04-26

申请号：US11608078

申请日：2006-12-07

申请人： Heiji Watanabe ,  Haruhiko Ono ,  Nobuyuki Ikarashi

发明人： Heiji Watanabe ,  Haruhiko Ono ,  Nobuyuki Ikarashi

IPC分类号： H01L29/792 ,  H01L31/00 ,  H01L35/26

CPC分类号： H01L21/02142 ,  H01L21/02271 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/517

摘要： A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is lower in a center portion in the film thickness direction than in an upper portion and in a lower portion.

摘要翻译： 半导体器件具有直接或间接地形成在衬底上的衬底和电介质膜。 电介质膜含有金属硅酸盐膜，并且在膜厚度方向上的中心部分，金属硅酸盐膜中的硅浓度比上部和下部低。

公开(公告)号：US08088678B2

公开(公告)日：2012-01-03

申请号：US12631286

申请日：2009-12-04

申请人： Naomu Kitano ,  Takashi Minami ,  Motomu Kosuda ,  Heiji Watanabe

发明人： Naomu Kitano ,  Takashi Minami ,  Motomu Kosuda ,  Heiji Watanabe

IPC分类号： H01L32/05

CPC分类号： H01L21/67207 ,  H01L21/28229 ,  H01L21/31683 ,  H01L29/513 ,  H01L29/517

摘要： A first aspect of the present invention provides a semiconductor manufacturing apparatus including: a load lock chamber; a transfer chamber; and a treatment chamber 1 and a treatment chamber 2 which carry out treatment using plasma, wherein, in the treatment chamber 2, an exhaust means is provided with a control means for making an oxygen partial pressure into 1*10−5 [Pa] or less. A second aspect of the present invention provides a method for forming a high dielectric constant film and a metal electrode successively, the method including the steps of: (1) depositing a metal film on a silicon oxide film or a silicon oxynitride film in the treatment chamber 1; (2) forming, in the treatment chamber 2, a high dielectric constant film by using the metal film formed in the treatment chamber 1; and (3) depositing, in the treatment chamber 1 or a treatment chamber 3 installed additionally, a metal electrode material on the high dielectric film formed in the treatment chamber 2, wherein the steps are carried out successively without being exposed to the atmosphere.

摘要翻译： 本发明的第一方面提供一种半导体制造装置，包括：负载锁定室; 传送室; 以及处理室1和处理室2，其使用等离子体进行处理，其中在处理室2中，排气装置设置有用于使氧分压为1×10 -5 [Pa]或 减。 本发明的第二方面提供了一种依次形成高介电常数膜和金属电极的方法，所述方法包括以下步骤：（1）在处理中在氧化硅膜或氧氮化硅膜上沉积金属膜 室1; （2）通过使用形成在处理室1中的金属膜在处理室2中形成高介电常数膜; （3）在处理室1或另外安装的处理室3内，在形成于处理室2中的高电介质膜上沉积金属电极材料，其中，这些步骤连续地进行而不暴露于大气中。

公开(公告)号：US07679148B2

公开(公告)日：2010-03-16

申请号：US10521311

申请日：2003-07-16

申请人： Heiji Watanabe ,  Hirohito Watanabe ,  Toru Tatsumi ,  Shinji Fujieda

发明人： Heiji Watanabe ,  Hirohito Watanabe ,  Toru Tatsumi ,  Shinji Fujieda

IPC分类号： H01L29/76

CPC分类号： H01L21/28202 ,  H01L21/28035 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6656

摘要： The task of the present invention is to enable formation of a gate insulating film structure having a good-quality interface between a silicon oxide film and silicon in an interface between a high dielectric constant thin film and a silicon substrate to provide a semiconductor device and a semiconductor manufacturing method which are capable of improving interface electrical characteristics, which has been a longstanding task in practical use of a high dielectric constant insulating film. A metal layer deposition process and a heat treatment process which supply metal elements constituting a high dielectric constant film on a surface of a base silicon oxide film 103 allow the metal elements to be diffused into the base silicon oxide film 103 to thereby form an insulating film structure 105 as a gate insulating film, after forming the base silicon oxide film 103 on a surface of a silicon substrate 101. The insulating film structure 105 including a silicate region comprises a silicon oxide film region, a silicate region, and a metal rich region, forming a silicate structure having composition modulation in which composition of metal increases as closer to an upper portion, and the composition of silicon increases as closer to a lower portion.

摘要翻译： 本发明的任务是能够在高介电常数薄膜和硅衬底之间的界面中形成具有氧化硅膜和硅之间良好界面的栅极绝缘膜结构，以提供半导体器件和 能够提高界面电特性的半导体制造方法，这在高介电常数绝缘膜的实际应用中是长期的任务。 在基底氧化硅膜103的表面上提供构成高介电常数膜的金属元素的金属层沉积工艺和热处理工艺允许金属元素扩散到基底氧化膜103中，从而形成绝缘膜 结构105作为栅极绝缘膜，在硅衬底101的表面上形成基底氧化膜103.包括硅酸盐区的绝缘膜结构105包括氧化硅膜区域，硅酸盐区域和富金属区域 形成具有组成调制的硅酸盐结构，其中金属的组成随着更靠近上部而增加，并且硅的组成随着更靠近下部而增加。