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发明授权
US08026543B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same 有权
具有相变存储单元的半导体器件，使用该半导体器件的电子系统及其制造方法

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
摘要：
A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.
摘要（中）：

相变存储器件具有氧化阻挡层以防止存储器细胞污染或氧化。 在一个实施例中，半导体存储器件包括设置在半导体衬底上的成型层，相变材料图案和电绝缘材料的氧化屏障。 成型层在其上部具有突出部。 可相变材料图案的一部分覆盖模制层的突起，并且相变材料图案的另一部分延伸穿过突出部。 氧化屏障的电绝缘材料可以覆盖相变材料图案和/或延伸并且覆盖模制层的突起和设置在突起上的相变材料图案的部分邻接的整个区域。

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