发明授权
US08026602B2 Fabrication method of semiconductor device having conductive bumps
有权
具有导电凸块的半导体器件的制造方法
- 专利标题: Fabrication method of semiconductor device having conductive bumps
- 专利标题(中): 具有导电凸块的半导体器件的制造方法
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申请号: US12872164申请日: 2010-08-31
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公开(公告)号: US08026602B2公开(公告)日: 2011-09-27
- 发明人: Chun-Chi Ke , Chien-Ping Huang
- 申请人: Chun-Chi Ke , Chien-Ping Huang
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 代理机构: Edwards Angell Palmer & Dodge LLP
- 代理商 Peter F. Corless; Steven M. Jensen
- 优先权: TW95149395A 20061228
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
A semiconductor device having conductive bumps and a fabrication method thereof are provided. The fabrication method mainly including steps of: providing a semiconductor substrate having a solder pad and a passivation layer formed thereon with a portion of the solder pads exposed from the passivation layer; disposing a first metal layer on the solder pad and a portion of the passivation layer around the solder pad; disposing a covering layer on the first metal layer and the passivation layer, and forming an aperture in the covering layer to expose a portion of the first metal layer, wherein a center of the aperture is deviated from that of the solder pad; deposing a metal pillar on the portion of the first metal layer; and deposing a solder material on an outer surface of the metal pillar for providing a better buffering effect.
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