- 专利标题: Method for analyzing defect data and inspection apparatus and review system
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申请号: US11472368申请日: 2006-06-22
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公开(公告)号: US08027527B2公开(公告)日: 2011-09-27
- 发明人: Hisae Shibuya , Yuji Takagi
- 申请人: Hisae Shibuya , Yuji Takagi
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Hitachi, Ltd.,Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi, Ltd.,Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2001-110794 20010410; JP2001-173411 20010608; JP2001-292786 20010926
- 主分类号: G06K9/00
- IPC分类号: G06K9/00
摘要:
The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.
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