公开(公告)号：US07720275B2

公开(公告)日：2010-05-18

申请号：US11319271

申请日：2005-12-29

申请人： Hisae Shibuya ,  Akira Hamamatsu ,  Yuji Takagi

发明人： Hisae Shibuya ,  Akira Hamamatsu ,  Yuji Takagi

IPC分类号： G06K9/00 ,  G06K9/62

CPC分类号： G06K9/6221 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8854 ,  G01N2021/95676

摘要： With the objective of achieving defect kind training in a short period of time to teach classification conditions of defects detected as a result of inspecting a thin film device, according to one aspect of the present invention, there is provided a visual inspection method, and an apparatus therefore, comprising the steps of: detecting defects based on inspection images acquired by optical or electronic defect detection means, and at the same time calculating features of the defects; and classifying the defects according to classification conditions set beforehand, wherein said classification condition setting step further includes the steps of: collecting defect features over a large number of defects acquired beforehand from the defect detection step; sampling defects based on the distribution of the collected defect features over the large number of defects; and setting defect classification conditions based on the result of reviewing the sampled defects.

摘要翻译： 为了在短时间内实现缺陷种类训练，目的在于教导检查薄膜装置的检测缺陷的分类条件，根据本发明的一个方面，提供一种目视检查方法， 因此，包括以下步骤：基于由光学或电子缺陷检测装置获取的检查图像，同时计算缺陷的特征来检测缺陷; 并根据预先设定的分类条件对缺陷进行分类，其中所述分类条件设置步骤还包括以下步骤：从缺陷检测步骤预先获取的大量缺陷中收集缺陷特征; 基于收集的缺陷特征分布在大量缺陷上的采样缺陷; 并根据检查采样缺陷的结果设置缺陷分类条件。

公开(公告)号：US20060238755A1

公开(公告)日：2006-10-26

申请号：US11472368

申请日：2006-06-22

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： G01N21/00 ,  G06K9/00

CPC分类号： G01N21/956 ,  G01N21/9501 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/30148

摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

公开(公告)号：US08086422B2

公开(公告)日：2011-12-27

申请号：US12341657

申请日：2008-12-22

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： G06F11/00

CPC分类号： G01N21/956 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/30148

摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

摘要翻译： 基于由检查装置检测到的缺陷坐标来分析缺陷的分布状态，将其分类为分布特征类别，或重复缺陷，拥塞缺陷，线性分布缺陷，环/块分布缺陷和随机 缺陷。 在半导体基板的制造工序中，基于由检查装置检测出的缺陷数据来分析缺陷分布状态，从而指定装置或处理中的缺陷的原因。

公开(公告)号：US20110164809A1

公开(公告)日：2011-07-07

申请号：US13049943

申请日：2011-03-17

申请人： Hisae Shibuya ,  Akira Hamamatsu ,  Yuji Takagi

发明人： Hisae Shibuya ,  Akira Hamamatsu ,  Yuji Takagi

IPC分类号： G06K9/00

CPC分类号： G06K9/6221 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8854 ,  G01N2021/95676

摘要： With the objective of achieving defect kind training in a short period of time to teach classification conditions of defects detected as a result of inspecting a thin film device, according to one aspect of the present invention, there is provided a visual inspection method, and an apparatus therefor, comprising the steps of: detecting defects based on inspection images acquired by optical or electronic defect detection means, and at the same time calculating features of the defects; and classifying the defects according to classification conditions set beforehand, wherein said classification condition setting step further includes the steps of: collecting defect features over a large number of defects acquired beforehand from the defect detection step; sampling defects based on the distribution of the collected defect features over the large number of defects; and setting defect classification conditions based on the result of reviewing the sampled defects.

摘要翻译： 为了在短时间内实现缺陷种类训练，目的在于教导检查薄膜装置的检测缺陷的分类条件，根据本发明的一个方面，提供一种目视检查方法， 其装置包括以下步骤：基于由光学或电子缺陷检测装置获取的检查图像检测缺陷，同时计算缺陷的特征; 并根据预先设定的分类条件对缺陷进行分类，其中所述分类条件设置步骤还包括以下步骤：从缺陷检测步骤预先获取的大量缺陷中收集缺陷特征; 基于收集的缺陷特征分布在大量缺陷上的采样缺陷; 并根据检查采样缺陷的结果设置缺陷分类条件。

公开(公告)号：US20060239536A1

公开(公告)日：2006-10-26

申请号：US11472399

申请日：2006-06-22

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： H04N7/18 ,  G06K9/00 ,  G01N21/00

CPC分类号： G01N21/956 ,  G01N21/9501 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/30148

摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

公开(公告)号：US20050168731A1

公开(公告)日：2005-08-04

申请号：US11095614

申请日：2005-04-01

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： H01L21/66 ,  G01N21/95 ,  G06T7/00 ,  G01N21/88

CPC分类号： G01N21/956 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/30148

摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

摘要翻译： 基于由检查装置检测到的缺陷坐标来分析缺陷的分布状态，将其分类为分布特征类别，或重复缺陷，拥塞缺陷，线性分布缺陷，环/块分布缺陷和随机 缺陷。 在半导体基板的制造工序中，基于由检查装置检测出的缺陷数据来分析缺陷分布状态，从而指定装置或处理中的缺陷的原因。

公开(公告)号：US08116556B2

公开(公告)日：2012-02-14

申请号：US12888286

申请日：2010-09-22

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： G06K9/00

CPC分类号： G06T7/0004 ,  G06T2207/30148

摘要： In a process for manufacturing a semiconductor wafer, defect distribution state analysis is performed so as to facilitate identification of the defect cause including a device cause and a process cause by classifying the defect distribution state according to the defect position coordinates detected by the inspection device, into one of the distribution characteristic categories: repeated defects, clustered defects, arc-shaped regional defects, radial regional defects, line type regional defects, ring and blob type regional defects, and random defects.

摘要翻译： 在制造半导体晶片的过程中，进行缺陷分布状态分析，以便根据由检查装置检测到的缺陷位置坐标来分类缺陷分布状态，便于识别包括装置原因和处理原因的缺陷原因， 成为分布特征类别之一：反复缺陷，聚类缺陷，弧形区域缺陷，径向区域缺陷，线型区域缺陷，环型和Blob型区域缺陷以及随机缺陷。

公开(公告)号：US08027527B2

公开(公告)日：2011-09-27

申请号：US11472368

申请日：2006-06-22

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： G06K9/00

CPC分类号： G01N21/956 ,  G01N21/9501 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/30148

摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

公开(公告)号：US07813539B2

公开(公告)日：2010-10-12

申请号：US10672010

申请日：2003-09-25

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： G06K9/00

CPC分类号： G06T7/0004 ,  G06T2207/30148

摘要： In a process for manufacturing a semiconductor wafer, defect distribution state analysis is performed so as to facilitate identification of the defect cause including a device cause and a process cause by classifying the defect distribution state according to the defect position coordinates detected by the inspection device, into one of the distribution characteristic categories: repeated defects, clustered defects, arc-shaped regional defects, radial regional defects, line type regional defects, ring and blob type regional defects, and random defects.

摘要翻译： 在制造半导体晶片的过程中，进行缺陷分布状态分析，以便根据由检查装置检测到的缺陷位置坐标来分类缺陷分布状态，便于识别包括装置原因和处理原因的缺陷原因， 成为分布特征类别之一：反复缺陷，聚类缺陷，弧形区域缺陷，径向区域缺陷，线型区域缺陷，环型和Blob型区域缺陷以及随机缺陷。

公开(公告)号：US20090105990A1

公开(公告)日：2009-04-23

申请号：US12341657

申请日：2008-12-22

申请人： Hisae SHIBUYA ,  Yuji Takagi

发明人： Hisae SHIBUYA ,  Yuji Takagi

IPC分类号： G06F15/00

CPC分类号： G01N21/956 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/30148

摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

摘要翻译： 基于由检查装置检测到的缺陷坐标来分析缺陷的分布状态，将其分类为分布特征类别，或重复缺陷，拥塞缺陷，线性分布缺陷，环/块分布缺陷和随机 缺陷。 在半导体基板的制造工序中，基于由检查装置检测出的缺陷数据来分析缺陷分布状态，从而指定装置或处理中的缺陷的原因。