发明授权
- 专利标题： Atomic layer deposition apparatus
- 专利标题（中）： 原子层沉积装置
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申请号： US12953220申请日： 2010-11-23
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公开(公告)号： US08027746B2公开(公告)日： 2011-09-27
- 发明人: Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
- 申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, L.L.P.
- 主分类号： G06F19/00
- IPC分类号： G06F19/00 ; C23C16/00
摘要：
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
公开/授权文献
- US20110111603A1 ATOMIC LAYER DEPOSITION APPARATUS 公开/授权日：2011-05-12
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