Invention Grant
US08030188B2 Methods of forming a compound semiconductor device including a diffusion region
有权
形成包括扩散区域的化合物半导体器件的方法
- Patent Title: Methods of forming a compound semiconductor device including a diffusion region
- Patent Title (中): 形成包括扩散区域的化合物半导体器件的方法
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Application No.: US12508382Application Date: 2009-07-23
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Publication No.: US08030188B2Publication Date: 2011-10-04
- Inventor: Mi-Ran Park , Jae-Sik Sim , Yong-Hwan Kwon , Bongki Mheen , Dae Kon Oh
- Applicant: Mi-Ran Park , Jae-Sik Sim , Yong-Hwan Kwon , Bongki Mheen , Dae Kon Oh
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2008-0123174 20081205; KR10-2009-0027619 20090331
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.
Public/Granted literature
- US20100144123A1 METHODS OF FORMING A COMPOUND SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION REGION Public/Granted day:2010-06-10
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