公开(公告)号：US08030188B2

公开(公告)日：2011-10-04

申请号：US12508382

申请日：2009-07-23

申请人： Mi-Ran Park ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Dae Kon Oh

发明人： Mi-Ran Park ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Dae Kon Oh

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/2258

摘要： Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.

摘要翻译： 提供一种形成化合物半导体器件的方法。 在该方法中，在未掺杂的化合物半导体层上形成掺杂剂元素层。 执行退火处理以将掺杂剂元素层中的掺杂剂扩散到未掺杂的化合物半导体层中，从而形成掺杂剂扩散区域。 相对于具有掺杂剂扩散区域的基板，使用液氮进行快速冷却处理。

公开(公告)号：US08428091B2

公开(公告)日：2013-04-23

申请号：US12973481

申请日：2010-12-20

申请人： Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

发明人： Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

IPC分类号： H01S3/10 ,  H01S3/04 ,  H01S5/00

CPC分类号： H01S5/423 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

摘要： Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.

摘要翻译： 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。

公开(公告)号：US08611003B2

公开(公告)日：2013-12-17

申请号：US12963471

申请日：2010-12-08

申请人： Joon Tae Ahn ,  Hong-Seok Seo ,  Bong Je Park ,  Dae Kon Oh

发明人： Joon Tae Ahn ,  Hong-Seok Seo ,  Bong Je Park ,  Dae Kon Oh

IPC分类号： H04B10/17 ,  H01S3/094 ,  H01S3/067

CPC分类号： H01S3/0675 ,  H01S3/06754 ,  H01S3/094007 ,  H01S3/09415 ,  H01S3/1603

摘要： Provided is a double clad fiber device. The double clad fiber device includes a double clad fiber, a pump combiner, at least one first laser diode, and at least one second laser diode. The double clad fiber includes a core and a clad. The pump combiner provides pump light to the core and the clad through one end of the double clad fiber, respectively. The at least one first laser diode provides first pump light to the clad through the pump combiner. The at least one second laser diode provides second pump light to the core through the pump combiner.

摘要翻译： 提供一种双包层光纤器件。 双包层光纤器件包括双包层光纤，泵组合器，至少一个第一激光二极管和至少一个第二激光二极管。 双包层纤维包括芯和包层。 泵组合器分别通过双包层光纤的一端向芯和包层提供泵浦光。 所述至少一个第一激光二极管通过泵组合器向包层提供第一泵浦光。 所述至少一个第二激光二极管通过泵组合器向芯提供第二泵浦光。

公开(公告)号：US20100316383A1

公开(公告)日：2010-12-16

申请号：US12582211

申请日：2009-10-20

申请人： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

发明人： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

IPC分类号： H04J14/02

CPC分类号： H04J14/0282

摘要： Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.

摘要翻译： 提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。

公开(公告)号：US20100260223A1

公开(公告)日：2010-10-14

申请号：US11633201

申请日：2006-12-04

申请人： Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

发明人： Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

IPC分类号： H01S5/343 ,  H01L33/02

CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2304/00

摘要： A quantum dot laser diode and a method of fabricating the same are provided. The quantum dot laser diode includes: a first clad layer formed on an InP substrate; a first lattice-matched layer formed on the first clad layer; an active layer formed on the first lattice-matched layer, and including at least one quantum dot layer formed of an InAlAs quantum dot or an InGaPAs quantum dot which is grown by an alternate growth method; a second lattice-matched layer formed on the active layer; a second clad layer formed on the second lattice-matched layer, and an ohmic contact layer formed on the second clad layer.

摘要翻译： 提供了一种量子点激光二极管及其制造方法。 量子点激光二极管包括：形成在InP衬底上的第一覆层; 形成在第一覆盖层上的第一晶格匹配层; 形成在第一晶格匹配层上的活性层，并且包括由交替生长法生长的InAlAs量子点或InGaPAs量子点形成的至少一个量子点层; 形成在所述有源层上的第二晶格匹配层; 形成在第二晶格匹配层上的第二覆盖层和形成在第二覆盖层上的欧姆接触层。

公开(公告)号：USRE45071E1

公开(公告)日：2014-08-12

申请号：US13070906

申请日：2011-03-24

申请人： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

发明人： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

IPC分类号： H01S5/22

CPC分类号： B82Y10/00 ,  B82Y20/00

摘要： Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

摘要翻译： 提供半导体激光二极管及其制造方法。 半导体激光二极管包括设置在基板上的下包层; 包括光波导层，有源层，上覆层和欧姆接触层的脊，其顺序地层叠在下包层上，并且具有预定的宽度，其通过对两者进行沟道蚀刻处理而获得 山脊边; 设置在所述上​​下包层的表面上以控制所述脊的宽度的氧化物层; 布置在所述脊的左通道和右通道上的电介质层; 设置在所得结构的整个表面上以包围脊和电介质层的上电极层; 以及设置在所述基板的底面上的下电极层。 该方法比制造半导体激光二极管的常规方法简单。 此外，通过控制湿式氧化时间，可以自由地控制脊的宽度，并且可以自动形成欧姆接触层。

公开(公告)号：US08594469B2

公开(公告)日：2013-11-26

申请号：US12640627

申请日：2009-12-17

申请人： Byung-Seok Choi ,  Dae Kon Oh ,  O-Kyun Kwon ,  Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim

发明人： Byung-Seok Choi ,  Dae Kon Oh ,  O-Kyun Kwon ,  Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim

IPC分类号： G02F1/035

CPC分类号： H01S5/50 ,  G02F1/2955 ,  G02F2001/0155 ,  G02F2001/0156 ,  G02F2202/06 ,  G02F2202/101 ,  G02F2202/102 ,  G02F2203/02 ,  G02F2203/15 ,  G02F2203/20 ,  G02F2203/70

摘要： An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.

摘要翻译： 光放大器包括无源波导区域和有源波导区域。 无源波导区域被配置为接收入射光信号并调整光信号的模式。 有源波导区域被集成到无源波导区域，并被配置为响应于施加到有源波导区域的电流改变载波的密度，对从无源波导区域接收的光信号执行增益调制。 有源波导区域的内部损耗被调节以产生共振效应，从而增加有源波导的带宽。 因此，光放大器可以在低电流条件下具有宽带宽。

公开(公告)号：US20110134513A1

公开(公告)日：2011-06-09

申请号：US12773196

申请日：2010-05-04

申请人： Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

发明人： Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

IPC分类号： H01S5/026 ,  G02B6/26 ,  G02B6/42

CPC分类号： H01S5/0265 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/2813 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/50

摘要： Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device.

摘要翻译： 提供了可以改善小型化和集成的光学装置模块。 光学器件模块包括具有掩埋结构的半导体光学放大器，并且包括掩埋在第一衬底上的覆盖层中的第一有源层，光调制器，其中第二有源层的侧壁沿着第一有源层 暴露在与第一衬底相交的第二衬底上的层，光学调制器具有脊结构，以及至少一个多模干涉耦合器，其中与第一有源层结合的第二有源层被掩埋在覆盖层中， 所述多模干涉耦合器在所述光调制器和所述半导体光放大器之间的所述第二基板上共享所述第二有源层并与所述第二光学装置集成。

公开(公告)号：US20100252094A1

公开(公告)日：2010-10-07

申请号：US12676734

申请日：2008-07-31

申请人： Hyun Soo Kim ,  Won Seok Han ,  Byung Seok Choi ,  Dae Kon Oh

发明人： Hyun Soo Kim ,  Won Seok Han ,  Byung Seok Choi ,  Dae Kon Oh

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/02245 ,  H01L31/0547 ,  Y02E10/52 ,  Y02E10/547

摘要： Provided are a high-efficiency solar cell, which converts light energy of incident light into electrical energy, and a method of manufacturing the same. An upper ohmic layer is formed at a predetermined tilt angle less than 45° and an ohmic electrode is deposited on the upper ohmic layer so as to reduce shadow loss due to the ohmic electrode and lessen contact resistance.

摘要翻译： 提供了将入射光的光能转换为电能的高效率太阳能电池及其制造方法。 以小于45°的预定倾斜角度形成上欧姆层，并且在上欧姆层上沉积欧姆电极，以减少由于欧姆电极引起的阴影损失并降低接触电阻。

公开(公告)号：US09006749B2

公开(公告)日：2015-04-14

申请号：US12499902

申请日：2009-07-09

申请人： Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

发明人： Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

IPC分类号： H01L27/15 ,  H01S5/12 ,  B82Y20/00 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173

摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.