Invention Grant
- Patent Title: System and method for using first-principles simulation to facilitate a semiconductor manufacturing process
- Patent Title (中): 使用第一原理模拟以促进半导体制造过程的系统和方法
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Application No.: US10673138Application Date: 2003-09-30
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Publication No.: US08032348B2Publication Date: 2011-10-04
- Inventor: Andrej S. Mitrovic , Eric J. Strang
- Applicant: Andrej S. Mitrovic , Eric J. Strang
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06G7/48 ; G06F19/00 ; H01L21/00

Abstract:
A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to facilitate the process performed by the semiconductor processing tool.
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