发明授权
- 专利标题： Method for insulating film formation, storage medium from which information is readable with computer, and processing system
- 专利标题（中）： 绝缘膜形成方法，计算机可读取信息的存储介质和处理系统
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申请号： US12865969申请日： 2009-02-06
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公开(公告)号： US08034179B2公开(公告)日： 2011-10-11
- 发明人: Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
- 申请人： Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Abelman Frayne & Schwab
- 代理商 Harry K. Ahn
- 优先权： JP2008-029476 20080208; JP2008-029477 20080208
- 国际申请： PCT/JP2009/052447 WO 20090206
- 国际公布： WO2009/099254 WO 20090813
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma.
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